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IXSP20N60B2D1IXYS IGBT 600V 35A 190W TO220
Part NumberIXSP20N60B2D1
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXSP20N60B2D1
DescriptionIGBT 600V 35A 190W TO220
In stock4271
Data sheet
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  • Specifications
  • Product Details - IXSP20N60B2D1
  • IXSP20N60B2D1 Tech Specifications
    IXYS - IXSP20N60B2D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXSP20N60B2D1
    Manufacturer IXYS / Littelfuse
    Voltage - Collector Emitter Breakdown (Max) 600 V
    Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 16A
    Test Condition 480V, 16A, 10Ohm, 15V
    Td (on/off) @ 25°C 30ns/116ns
    Switching Energy 380µJ (off)
    Supplier Device Package TO-220-3
    Series -
    Reverse Recovery Time (trr) 30 ns
    Power - Max 190 W
    Package / Case TO-220-3
    Package Bulk
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Type Standard
    IGBT Type PT
    Gate Charge 33 nC
    Current - Collector Pulsed (Icm) 60 A
    Current - Collector (Ic) (Max) 35 A
    Base Product Number IXSP20
  • TheIXSP20N60B2D1is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is IGBT 600V 35A 190W TO220 and it falls under the category of Transistors - IGBTs - Single, with Manufacturer of IXYS / Littelfuse and Voltage - Collector Emitter Breakdown (Max) of 600 V and Vce(on) (Max) @ Vge, Ic of 2.5V @ 15V, 16A. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXSP20N60B2D1 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXSP20N60B2D1 IXSP15N120B IXSQ20N60B2D1 IXSP10N60B2D1
Part Number IXSP20N60B2D1 IXSP15N120B IXSQ20N60B2D1 IXSP10N60B2D1
Manufacturer IXYS IXYS IXYS IXYS
Current - Collector Pulsed (Icm) 60 A 60 A - 30 A
Package / Case TO-220-3 TO-220-3 TO-3P-3, SC-65-3 TO-220-3
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 16A 3.4V @ 15V, 15A 2.5V @ 15V, 16A 2.5V @ 15V, 10A
Test Condition 480V, 16A, 10Ohm, 15V 960V, 15A, 10Ohm, 15V - 480V, 10A, 30Ohm, 15V
Voltage - Collector Emitter Breakdown (Max) 600 V 1200 V 600 V 600 V
Power - Max 190 W 150 W 190 W 100 W
Input Type Standard Standard Standard Standard
Td (on/off) @ 25°C 30ns/116ns 30ns/148ns 30ns/116ns 30ns/180ns
Current - Collector (Ic) (Max) 35 A 30 A 35 A 20 A
Base Product Number IXSP20 IXSP15 IXSQ20 IXSP10
Package Bulk Box Bulk Bulk
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Gate Charge 33 nC 57 nC 33 nC 17 nC
Series - - - -
Switching Energy 380µJ (off) 1.75mJ (off) 380µJ (off) 430µJ (off)
IGBT Type PT - PT PT
Supplier Device Package TO-220-3 TO-220-3 TO-3P TO-220-3
Reverse Recovery Time (trr) 30 ns - 30 ns 25 ns
Mounting Type Through Hole Through Hole Through Hole Through Hole
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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