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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA08N50D2
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IXTA08N50D2IXYS MOSFET N-CH 500V 800MA TO263
Part NumberIXTA08N50D2
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA08N50D2
DescriptionMOSFET N-CH 500V 800MA TO263
In stock17771
Data sheet
IXTA08N50D2.pdf
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  • Specifications
  • Product Details - IXTA08N50D2
  • IXTA08N50D2 Tech Specifications
    IXYS - IXTA08N50D2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA08N50D2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id -
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series Depletion
    Rds On (Max) @ Id, Vgs 4.6Ohm @ 400mA, 0V
    Power Dissipation (Max) 60W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 5 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) -
    Drain to Source Voltage (Vdss) 500 V
    Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
    Base Product Number IXTA08
  • TheIXTA08N50D2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 500V 800MA TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA08N50D2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA08N50D2 IXTA102N15T-TRL IXTA08N100D2 IXTA08N100D2HV
Part Number IXTA08N50D2 IXTA102N15T-TRL IXTA08N100D2 IXTA08N100D2HV
Manufacturer IXYS IXYS IXYS IXYS
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 5 V 87 nC @ 10 V 14.6 nC @ 5 V 14.6 nC @ 5 V
Series Depletion Trench Depletion Depletion
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA TO-263 (D2Pak) TO-263AA TO-263HV
FET Feature Depletion Mode - Depletion Mode Depletion Mode
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Drain to Source Voltage (Vdss) 500 V 150 V 1000 V 1000 V
Base Product Number IXTA08 IXTA102 IXTA08 IXTA08
Package Tube Tape & Reel (TR) Tube Tube
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 800mA (Tc) 102A (Tc) 800mA (Tc) 800mA (Tj)
Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 25 V 5220 pF @ 25 V 325 pF @ 25 V 325 pF @ 25 V
Vgs (Max) ±20V ±20V ±20V ±20V
Power Dissipation (Max) 60W (Tc) 455W (Tc) 60W (Tc) 60W (Tc)
Rds On (Max) @ Id, Vgs 4.6Ohm @ 400mA, 0V 18mOhm @ 51A, 10V 21Ohm @ 400mA, 0V 21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id - 5V @ 1mA - 4V @ 25µA
Drive Voltage (Max Rds On, Min Rds On) - 10V - 0V
FET Type N-Channel N-Channel N-Channel N-Channel
  • IXYS Related Products
  • IXTA08N50D2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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