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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA10N60P
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IXTA10N60PIXYS MOSFET N-CH 600V 10A TO263
Part NumberIXTA10N60P
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA10N60P
DescriptionMOSFET N-CH 600V 10A TO263
In stock6061
Data sheet
IXTA10N60P.pdf
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  • Specifications
  • Product Details - IXTA10N60P
  • IXTA10N60P Tech Specifications
    IXYS - IXTA10N60P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA10N60P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series Polar
    Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V
    Power Dissipation (Max) 200W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTA10
  • TheIXTA10N60Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 10A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA10N60P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA10N60P IXTA08N50D2 IXTA10P15T IXTA100N04T2
Part Number IXTA10N60P IXTA08N50D2 IXTA10P15T IXTA100N04T2
Manufacturer IXYS IXYS IXYS IXYS
Vgs (Max) ±30V ±20V ±15V ±20V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 800mA (Tc) 10A (Tc) 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V 312 pF @ 25 V 2210 pF @ 25 V 2690 pF @ 25 V
Supplier Device Package TO-263AA TO-263AA TO-263 (D2Pak) TO-263AA
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Series Polar Depletion TrenchP™ TrenchT2™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 12.7 nC @ 5 V 36 nC @ 10 V 25.5 nC @ 10 V
Package Tube Tube Tube Tube
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V 150 V 40 V
FET Type N-Channel N-Channel P-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id 5.5V @ 250µA - 4.5V @ 250µA 4V @ 250µA
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V 4.6Ohm @ 400mA, 0V 350mOhm @ 5A, 10V 7mOhm @ 25A, 10V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - Depletion Mode - -
Base Product Number IXTA10 IXTA08 IXTA10 IXTA100
Power Dissipation (Max) 200W (Tc) 60W (Tc) 83W (Ta) 150W (Tc)
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  • IXTA10N60P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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