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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA10P15T-TRL
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IXTA10P15T-TRLIXYS MOSFET P-CH 150V 10A TO263
Part NumberIXTA10P15T-TRL
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA10P15T-TRL
DescriptionMOSFET P-CH 150V 10A TO263
In stock7237
Data sheet
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  • Specifications
  • Product Details - IXTA10P15T-TRL
  • IXTA10P15T-TRL Tech Specifications
    IXYS - IXTA10P15T-TRL technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA10P15T-TRL
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±15V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263 (D2Pak)
    Series TrenchP™
    Rds On (Max) @ Id, Vgs 350mOhm @ 5A, 10V
    Power Dissipation (Max) 83W (Ta)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tape & Reel (TR)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 150 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTA10
  • TheIXTA10P15T-TRLis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 150V 10A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±15V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA10P15T-TRL or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA10P15T-TRL IXTA100N04T2 IXTA10N60P IXTA08N50D2
Part Number IXTA10P15T-TRL IXTA100N04T2 IXTA10N60P IXTA08N50D2
Manufacturer IXYS IXYS IXYS IXYS
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 100A (Tc) 10A (Tc) 800mA (Tc)
Vgs (Max) ±15V ±20V ±30V ±20V
Package Tape & Reel (TR) Tube Tube Tube
FET Feature - - - Depletion Mode
FET Type P-Channel N-Channel N-Channel N-Channel
Supplier Device Package TO-263 (D2Pak) TO-263AA TO-263AA TO-263AA
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 5.5V @ 250µA -
Series TrenchP™ TrenchT2™ Polar Depletion
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V 2690 pF @ 25 V 1610 pF @ 25 V 312 pF @ 25 V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 25.5 nC @ 10 V 32 nC @ 10 V 12.7 nC @ 5 V
Rds On (Max) @ Id, Vgs 350mOhm @ 5A, 10V 7mOhm @ 25A, 10V 740mOhm @ 5A, 10V 4.6Ohm @ 400mA, 0V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 150 V 40 V 600 V 500 V
Base Product Number IXTA10 IXTA100 IXTA10 IXTA08
Power Dissipation (Max) 83W (Ta) 150W (Tc) 200W (Tc) 60W (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
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  • IXTA10P15T-TRL Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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