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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA10P50P-TRL
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IXTA10P50P-TRLIXYS MOSFET P-CH 500V 10A TO263
Part NumberIXTA10P50P-TRL
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA10P50P-TRL
DescriptionMOSFET P-CH 500V 10A TO263
In stock4628
Data sheet
IXTA10P50P-TRL.pdf
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  • Specifications
  • Product Details - IXTA10P50P-TRL
  • IXTA10P50P-TRL Tech Specifications
    IXYS - IXTA10P50P-TRL technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA10P50P-TRL
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series Polar
    Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tape & Reel (TR)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 500 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTA10
  • TheIXTA10P50P-TRLis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 500V 10A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA10P50P-TRL or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA10P50P-TRL IXTA10P50P IXTA102N15T IXTA08N50D2
Part Number IXTA10P50P-TRL IXTA10P50P IXTA102N15T IXTA08N50D2
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 1mA -
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V 1Ohm @ 5A, 10V 18mOhm @ 500mA, 10V 4.6Ohm @ 400mA, 0V
Series Polar Polar Trench Depletion
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 50 nC @ 10 V 87 nC @ 10 V 12.7 nC @ 5 V
Base Product Number IXTA10 IXTA10 IXTA102 IXTA08
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - Depletion Mode
Drain to Source Voltage (Vdss) 500 V 500 V 150 V 500 V
Supplier Device Package TO-263AA TO-263AA TO-263AA TO-263AA
Vgs (Max) ±20V ±20V ±20V ±20V
Power Dissipation (Max) 300W (Tc) 300W (Tc) 455W (Tc) 60W (Tc)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
FET Type P-Channel P-Channel N-Channel N-Channel
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 25 V 2840 pF @ 25 V 5220 pF @ 25 V 312 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc) 102A (Tc) 800mA (Tc)
Package Tape & Reel (TR) Tube Tube Tube
  • IXYS Related Products
  • IXTA10P50P-TRL Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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