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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA110N055T
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IXTA110N055TIXYS MOSFET N-CH 55V 110A TO263
Part NumberIXTA110N055T
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA110N055T
DescriptionMOSFET N-CH 55V 110A TO263
In stock3647
Data sheet
1.IXTA110N055T.pdf 2.IXTA110N055T.pdf
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  • Specifications
  • Product Details - IXTA110N055T
  • IXTA110N055T Tech Specifications
    IXYS - IXTA110N055T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA110N055T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 100µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series TrenchMV™
    Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
    Power Dissipation (Max) 230W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 3080 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 110A (Tc)
    Base Product Number IXTA110
  • TheIXTA110N055Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 55V 110A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 100µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA110N055T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA110N055T IXTA102N15T IXTA110N055T7 IXTA102N15T-TRL
Part Number IXTA110N055T IXTA102N15T IXTA110N055T7 IXTA102N15T-TRL
Manufacturer IXYS IXYS IXYS IXYS
FET Type N-Channel N-Channel N-Channel N-Channel
Supplier Device Package TO-263AA TO-263AA TO-263-7 (IXTA) TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds 3080 pF @ 25 V 5220 pF @ 25 V 3080 pF @ 25 V 5220 pF @ 25 V
Vgs(th) (Max) @ Id 4V @ 100µA 5V @ 1mA 4V @ 100µA 5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Series TrenchMV™ Trench Trench Trench
Drain to Source Voltage (Vdss) 55 V 150 V 55 V 150 V
Vgs (Max) ±20V ±20V ±20V ±20V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Tube Tube Tube Tape & Reel (TR)
Base Product Number IXTA110 IXTA102 IXTA110 IXTA102
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 87 nC @ 10 V 67 nC @ 10 V 87 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 102A (Tc) 110A (Tc) 102A (Tc)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Power Dissipation (Max) 230W (Tc) 455W (Tc) 230W (Tc) 455W (Tc)
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 18mOhm @ 500mA, 10V 7mOhm @ 25A, 10V 18mOhm @ 51A, 10V
FET Feature - - - -
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  • IXTA110N055T Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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