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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA120N075T2
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IXTA120N075T2IXYS MOSFET N-CH 75V 120A TO263
Part NumberIXTA120N075T2
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA120N075T2
DescriptionMOSFET N-CH 75V 120A TO263
In stock5912
Data sheet
IXTA120N075T2.pdf
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  • Specifications
  • Product Details - IXTA120N075T2
  • IXTA120N075T2 Tech Specifications
    IXYS - IXTA120N075T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA120N075T2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series TrenchT2™
    Rds On (Max) @ Id, Vgs 7.7mOhm @ 60A, 10V
    Power Dissipation (Max) 250W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 4740 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 75 V
    Current - Continuous Drain (Id) @ 25°C 120A (Tc)
    Base Product Number IXTA120
  • TheIXTA120N075T2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 75V 120A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA120N075T2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA120N075T2 IXTA10P50P-TRL IXTA130N15X4 IXTA12N65X2
Part Number IXTA120N075T2 IXTA10P50P-TRL IXTA130N15X4 IXTA12N65X2
Manufacturer IXYS IXYS IXYS IXYS
Package Tube Tape & Reel (TR) Tube Tube
Supplier Device Package TO-263AA TO-263AA TO-263AA TO-263AA
Series TrenchT2™ Polar Ultra X4 Ultra X2
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 10A (Tc) 130A (Tc) 12A (Tc)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (Max) ±20V ±20V ±20V ±30V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA 5V @ 250µA
Base Product Number IXTA120 IXTA10 IXTA130 IXTA12
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 50 nC @ 10 V 87 nC @ 10 V 17 nC @ 10 V
Rds On (Max) @ Id, Vgs 7.7mOhm @ 60A, 10V 1Ohm @ 5A, 10V 8mOhm @ 65A, 10V 300mOhm @ 6A, 10V
Power Dissipation (Max) 250W (Tc) 300W (Tc) 400W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type N-Channel P-Channel N-Channel N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4740 pF @ 25 V 2840 pF @ 25 V 4770 pF @ 25 V 1100 pF @ 25 V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab) Variant
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Drain to Source Voltage (Vdss) 75 V 500 V 150 V 650 V
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  • IXTA120N075T2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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