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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA120P065T
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IXTA120P065TIXYS MOSFET P-CH 65V 120A TO263
Part NumberIXTA120P065T
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA120P065T
DescriptionMOSFET P-CH 65V 120A TO263
In stock6522
Data sheet
IXTA120P065T.pdf
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  • Specifications
  • Product Details - IXTA120P065T
  • IXTA120P065T Tech Specifications
    IXYS - IXTA120P065T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA120P065T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±15V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series TrenchP™
    Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V
    Power Dissipation (Max) 298W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 65 V
    Current - Continuous Drain (Id) @ 25°C 120A (Tc)
    Base Product Number IXTA120
  • TheIXTA120P065Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 65V 120A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±15V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA120P065T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA120P065T IXTA130N10T IXTA110N055P IXTA130N10T7
Part Number IXTA120P065T IXTA130N10T IXTA110N055P IXTA130N10T7
Manufacturer IXYS IXYS IXYS IXYS
Package Tube Tube Tube Tube
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V 5080 pF @ 25 V 2210 pF @ 25 V 5080 pF @ 25 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Supplier Device Package TO-263AA TO-263AA TO-263AA TO-263-7 (IXTA)
FET Type P-Channel N-Channel N-Channel N-Channel
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 104 nC @ 10 V 76 nC @ 10 V 104 nC @ 10 V
Drain to Source Voltage (Vdss) 65 V 100 V 55 V 100 V
FET Feature - - - -
Base Product Number IXTA120 IXTA130 IXTA110 IXTA130
Vgs (Max) ±15V ±30V ±20V ±20V
Series TrenchP™ Trench Polar Trench
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 5.5V @ 250µA 4.5V @ 250µA
Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V 9.1mOhm @ 25A, 10V 13.5mOhm @ 500mA, 10V 9.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 130A (Tc) 110A (Tc) 130A (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 298W (Tc) 360W (Tc) 390W (Tc) 360W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
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  • IXTA120P065T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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