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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA160N10T
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IXTA160N10TIXYS MOSFET N-CH 100V 160A TO263
Part NumberIXTA160N10T
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA160N10T
DescriptionMOSFET N-CH 100V 160A TO263
In stock5632
Data sheet
IXTA160N10T.pdf
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  • Specifications
  • Product Details - IXTA160N10T
  • IXTA160N10T Tech Specifications
    IXYS - IXTA160N10T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA160N10T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263AA
    Series Trench
    Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
    Power Dissipation (Max) 430W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 160A (Tc)
    Base Product Number IXTA160
  • TheIXTA160N10Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 100V 160A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA160N10T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA160N10T IXTA16N50P IXTA15N50L2-TRL IXTA152N085T7
Part Number IXTA160N10T IXTA16N50P IXTA15N50L2-TRL IXTA152N085T7
Manufacturer IXYS IXYS IXYS IXYS
Drain to Source Voltage (Vdss) 100 V 500 V 500 V 85 V
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V 43 nC @ 10 V 123 nC @ 10 V 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 2250 pF @ 25 V 4080 pF @ 25 V 5500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package Tube Tube Tape & Reel (TR) Tube
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 16A (Tc) 15A (Tc) 152A (Tc)
Vgs (Max) ±30V ±30V ±20V ±20V
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Series Trench Polar Linear L2™ TrenchMV™
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 400mOhm @ 8A, 10V 480mOhm @ 7.5A, 10V 7mOhm @ 25A, 10V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Type N-Channel N-Channel N-Channel N-Channel
Supplier Device Package TO-263AA TO-263AA TO-263 (D2Pak) TO-263-7 (IXTA)
Power Dissipation (Max) 430W (Tc) 300W (Tc) 300W (Tc) 360W (Tc)
Base Product Number IXTA160 IXTA16 IXTA15 IXTA152
Vgs(th) (Max) @ Id 4.5V @ 250µA 5.5V @ 250µA 4.5V @ 250µA 4V @ 250µA
FET Feature - - - -
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  • IXTA160N10T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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