Name: IXYS IXTA1N200P3HV
Brand: IXYS
SKU: IXTA1N200P3HV
Price: 3.94 USD
Availability: InStock

Specifications
Product Details - IXTA1N200P3HV

IXTA1N200P3HV Tech Specifications
IXYS - IXTA1N200P3HV technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA1N200P3HV

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 4V @ 250µA

Vgs (Max) ±20V

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-263AA

Series Polar P3™

Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V

Power Dissipation (Max) 125W (Tc)

Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 2000 V

Current - Continuous Drain (Id) @ 25°C 1A (Tc)

Base Product Number IXTA1
TheIXTA1N200P3HVis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 2000V 1A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA1N200P3HV or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXTA1N200P3HV-TRL	IXTA1R6N100D2HV	IXTA1R4N120P-TRL	IXTA1R4N100P
Manufacturer	IXYS	IXYS	IXYS	IXYS
Base Product Number	-	-	-	-
FET Feature	-	-	-	-
Series	-	*	*	*
Technology	-	-	-	-
Package / Case	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Vgs (Max)	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Power Dissipation (Max)	-	-	-	-
FET Type	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Operating Temperature	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Supplier Device Package	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
Mounting Type	-	-	-	-
Package	-	Bulk	Bulk	Bulk
Vgs(th) (Max) @ Id	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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