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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA4N150HV-TRL
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IXTA4N150HV-TRLIXYS MOSFET N-CH 1500V 4A TO263HV
Part NumberIXTA4N150HV-TRL
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA4N150HV-TRL
DescriptionMOSFET N-CH 1500V 4A TO263HV
In stock22978
Data sheet
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  • Specifications
  • Product Details - IXTA4N150HV-TRL
  • IXTA4N150HV-TRL Tech Specifications
    IXYS - IXTA4N150HV-TRL technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA4N150HV-TRL
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263HV
    Series -
    Rds On (Max) @ Id, Vgs 6Ohm @ 2A, 10V
    Power Dissipation (Max) 280W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 1576 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 44.5 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1500 V
    Current - Continuous Drain (Id) @ 25°C 4A (Tc)
    Base Product Number IXTA4
  • TheIXTA4N150HV-TRLis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1500V 4A TO263HV and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA4N150HV-TRL or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA4N150HV-TRL IXTA50N20P IXTA4N70X2 IXTA4N60P
Part Number IXTA4N150HV-TRL IXTA50N20P IXTA4N70X2 IXTA4N60P
Manufacturer IXYS IXYS IXYS IXYS
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Base Product Number IXTA4 IXTA50 IXTA4 IXTA4
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Rds On (Max) @ Id, Vgs 6Ohm @ 2A, 10V 60mOhm @ 50A, 10V 850mOhm @ 2A, 10V 2Ohm @ 2A, 10V
Supplier Device Package TO-263HV TO-263AA TO-263 (D2Pak) TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds 1576 pF @ 25 V 2720 pF @ 25 V 386 pF @ 25 V 635 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 50A (Tc) 4A (Tc) 4A (Tc)
Vgs (Max) ±30V ±20V ±30V ±30V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4.5V @ 250µA 5.5V @ 100µA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 44.5 nC @ 10 V 70 nC @ 10 V 11.8 nC @ 10 V 13 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
FET Feature - - - -
Drain to Source Voltage (Vdss) 1500 V 200 V 700 V 600 V
Power Dissipation (Max) 280W (Tc) 360W (Tc) 80W (Tc) 89W (Tc)
Series - Polar Ultra X2 PolarHV™
  • IXYS Related Products
  • IXTA4N150HV-TRL Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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