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IXTA8N65X2IXYS MOSFET N-CH 650V 8A TO263
Part NumberIXTA8N65X2
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA8N65X2
DescriptionMOSFET N-CH 650V 8A TO263
In stock13710
Data sheet
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  • Specifications
  • Product Details - IXTA8N65X2
  • IXTA8N65X2 Tech Specifications
    IXYS - IXTA8N65X2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA8N65X2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263
    Series Ultra X2
    Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
    Power Dissipation (Max) 150W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 8A (Tc)
    Base Product Number IXTA8
  • TheIXTA8N65X2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 8A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA8N65X2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA8N65X2 IXTA80N10T7 IXTA8PN50P IXTA80N12T2
Part Number IXTA8N65X2 IXTA80N10T7 IXTA8PN50P IXTA80N12T2
Manufacturer IXYS IXYS IXYS IXYS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 80A (Tc) 8A (Tc) 80A (Tc)
Series Ultra X2 TrenchMV™ - TrenchT2™
Power Dissipation (Max) 150W (Tc) 230W (Tc) - 325W (Tc)
Vgs (Max) ±30V ±30V - ±20V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 3040 pF @ 25 V - 4740 pF @ 25 V
FET Type N-Channel N-Channel N-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Base Product Number IXTA8 IXTA80 IXTA8 IXTA80
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V 14mOhm @ 25A, 10V - 17mOhm @ 40A, 10V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package Tube Tube Tube Tube
Supplier Device Package TO-263 TO-263-7 (IXTA) TO-263AA TO-263AA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 60 nC @ 10 V - 80 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V 100 V 500 V 120 V
FET Feature - - - -
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 100µA - 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Payment Support The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.
Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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