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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA90N075T2-TRL
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IXTA90N075T2-TRLIXYS MOSFET N-CH 75V 90A TO263
Part NumberIXTA90N075T2-TRL
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA90N075T2-TRL
DescriptionMOSFET N-CH 75V 90A TO263
In stock10129
Data sheet
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  • Specifications
  • Product Details - IXTA90N075T2-TRL
  • IXTA90N075T2-TRL Tech Specifications
    IXYS - IXTA90N075T2-TRL technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA90N075T2-TRL
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263 (D2Pak)
    Series TrenchT2™
    Rds On (Max) @ Id, Vgs 10mOhm @ 45A, 10V
    Power Dissipation (Max) 180W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tape & Reel (TR)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 75 V
    Current - Continuous Drain (Id) @ 25°C 90A (Tc)
    Base Product Number IXTA90
  • TheIXTA90N075T2-TRLis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 75V 90A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA90N075T2-TRL or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA90N075T2-TRL IXTA90N20X3 IXTA88N085T7 IXTA86N20X4
Part Number IXTA90N075T2-TRL IXTA90N20X3 IXTA88N085T7 IXTA86N20X4
Manufacturer IXYS IXYS IXYS IXYS
FET Type N-Channel N-Channel N-Channel N-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 78 nC @ 10 V 69 nC @ 10 V 70 nC @ 10 V
FET Feature - - - -
Base Product Number IXTA90 IXTA90 IXTA88 IXTA86
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 100µA 4.5V @ 250µA
Drain to Source Voltage (Vdss) 75 V 200 V 85 V 200 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Supplier Device Package TO-263 (D2Pak) TO-263 (D2Pak) TO-263-7 (IXTA) TO-263 (D2Pak)
Package Tape & Reel (TR) Tube Tube Tube
Series TrenchT2™ Ultra X3 TrenchMV™ Ultra X4
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (Max) ±20V ±20V ±20V ±20V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 180W (Tc) 390W (Tc) 230W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 10mOhm @ 45A, 10V 12mOhm @ 45A, 10V 11mOhm @ 25A, 10V 13mOhm @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V 5420 pF @ 25 V 3140 pF @ 25 V 2250 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc) 88A (Tc) 86A (Tc)
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  • IXTA90N075T2-TRL Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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