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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTA90N20X3
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IXTA90N20X3IXYS MOSFET N-CH 200V 90A TO263
Part NumberIXTA90N20X3
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTA90N20X3
DescriptionMOSFET N-CH 200V 90A TO263
In stock3815
Data sheet
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  • Specifications
  • Product Details - IXTA90N20X3
  • IXTA90N20X3 Tech Specifications
    IXYS - IXTA90N20X3 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTA90N20X3
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-263 (D2Pak)
    Series Ultra X3
    Rds On (Max) @ Id, Vgs 12mOhm @ 45A, 10V
    Power Dissipation (Max) 390W (Tc)
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 5420 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 200 V
    Current - Continuous Drain (Id) @ 25°C 90A (Tc)
    Base Product Number IXTA90
  • TheIXTA90N20X3is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 200V 90A TO263 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTA90N20X3 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTA90N20X3 IXTA8N65X2 IXTA96P085T-TRL IXTA90N15T
Part Number IXTA90N20X3 IXTA8N65X2 IXTA96P085T-TRL IXTA90N15T
Manufacturer IXYS IXYS IXYS IXYS
Rds On (Max) @ Id, Vgs 12mOhm @ 45A, 10V 500mOhm @ 4A, 10V 13mOhm @ 48A, 10V 20mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Supplier Device Package TO-263 (D2Pak) TO-263 TO-263AA TO-263AA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 8A (Tc) 96A (Tc) 90A (Tc)
Power Dissipation (Max) 390W (Tc) 150W (Tc) 298W (Tc) 455W (Tc)
FET Type N-Channel N-Channel P-Channel N-Channel
Series Ultra X3 Ultra X2 TrenchP™ Trench
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 4.5V @ 250µA 5V @ 250µA 4V @ 250µA 4.5V @ 1mA
Base Product Number IXTA90 IXTA8 IXTA96 IXTA90
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 12 nC @ 10 V 180 nC @ 10 V 80 nC @ 10 V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 200 V 650 V 85 V 150 V
Input Capacitance (Ciss) (Max) @ Vds 5420 pF @ 25 V 800 pF @ 25 V 13100 pF @ 25 V 4100 pF @ 25 V
Vgs (Max) ±20V ±30V ±15V ±30V
Package Tube Tube Tape & Reel (TR) Tube
FET Feature - - - -
  • IXYS Related Products
  • IXTA90N20X3 Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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