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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTF03N400
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IXTF03N400IXYS MOSFET N-CH 4000V 300MA I4PAC
Part NumberIXTF03N400
Packagei4-Pac™-5 (3 Leads)
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTF03N400
DescriptionMOSFET N-CH 4000V 300MA I4PAC
In stock3681
Data sheet
1.IXTF03N400.pdf 2.IXTF03N400.pdf
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  • Specifications
  • Product Details - IXTF03N400
  • IXTF03N400 Tech Specifications
    IXYS - IXTF03N400 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTF03N400
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISOPLUS i4-PAC™
    Series -
    Rds On (Max) @ Id, Vgs 300Ohm @ 150mA, 10V
    Power Dissipation (Max) 70W (Tc)
    Package / Case i4-Pac™-5 (3 Leads)
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 16.3 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 4000 V
    Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
    Base Product Number IXTF02
  • TheIXTF03N400is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 4000V 300MA I4PAC and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTF03N400 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTF03N400 IXTF200N10T IXTF6N200P3 IXTF1N450
Part Number IXTF03N400 IXTF200N10T IXTF6N200P3 IXTF1N450
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 25 V 9400 pF @ 25 V 3700 pF @ 25 V 1730 pF @ 25 V
Drain to Source Voltage (Vdss) 4000 V 100 V 2000 V 4500 V
Series - Trench Polar P3™ -
Package Tube Tube Tube Tube
Rds On (Max) @ Id, Vgs 300Ohm @ 150mA, 10V 7mOhm @ 50A, 10V 4.2Ohm @ 3A, 10V 85Ohm @ 50mA, 10V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±20V ±30V ±20V ±20V
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 70W (Tc) 156W (Tc) 215W (Tc) 160W (Tc)
Supplier Device Package ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ ISOPLUS i4-PAC™
Package / Case i4-Pac™-5 (3 Leads) i4-Pac™-5 ISOPLUSi5-Pak™ i4-Pac™-5 (3 Leads)
FET Feature - - - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 5V @ 250µA 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.3 nC @ 10 V 152 nC @ 10 V 143 nC @ 10 V 40 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 90A (Tc) 4A (Tc) 900mA (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Base Product Number IXTF02 IXTF200 IXTF6 IXTF1
  • IXYS Related Products
  • IXTF03N400 Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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