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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTH102N15T
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IXTH102N15TIXYS MOSFET N-CH 150V 102A TO247
Part NumberIXTH102N15T
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH102N15T
DescriptionMOSFET N-CH 150V 102A TO247
In stock3530
Data sheet
IXTH102N15T.pdf
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  • Specifications
  • Product Details - IXTH102N15T
  • IXTH102N15T Tech Specifications
    IXYS - IXTH102N15T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH102N15T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 1mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series Trench
    Rds On (Max) @ Id, Vgs 18mOhm @ 500mA, 10V
    Power Dissipation (Max) 455W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 150 V
    Current - Continuous Drain (Id) @ 25°C 102A (Tc)
    Base Product Number IXTH102
  • TheIXTH102N15Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 150V 102A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 1mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH102N15T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH102N15T IXTH10P50P IXTH04N300P3HV IXTH10N100D2
Part Number IXTH102N15T IXTH10P50P IXTH04N300P3HV IXTH10N100D2
Manufacturer IXYS IXYS IXYS IXYS
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type N-Channel P-Channel N-Channel N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Vgs(th) (Max) @ Id 5V @ 1mA 4V @ 250µA 4V @ 250µA -
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 10A (Tc) 400mA (Tc) 10A (Tc)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package Tube Tube Tube Tube
Power Dissipation (Max) 455W (Tc) 300W (Tc) 104W (Tc) 695W (Tc)
FET Feature - - - Depletion Mode
Drain to Source Voltage (Vdss) 150 V 500 V 3000 V 1000 V
Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 25 V 2840 pF @ 25 V 283 pF @ 25 V 5320 pF @ 25 V
Package / Case TO-247-3 TO-247-3 TO-247-3 Variant TO-247-3
Vgs (Max) ±20V ±20V ±20V ±20V
Rds On (Max) @ Id, Vgs 18mOhm @ 500mA, 10V 1Ohm @ 5A, 10V 190Ohm @ 200mA, 10V 1.5Ohm @ 5A, 10V
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247HV TO-247 (IXTH)
Base Product Number IXTH102 IXTH10 IXTH04 IXTH10
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 50 nC @ 10 V 13 nC @ 10 V 200 nC @ 5 V
Series Trench PolarP™ Polar P3™ Depletion
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
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  • IXTH102N15T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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