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IXTH10P60IXYS MOSFET P-CH 600V 10A TO247
Part NumberIXTH10P60
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH10P60
DescriptionMOSFET P-CH 600V 10A TO247
In stock2988
Data sheet
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  • Specifications
  • Product Details - IXTH10P60
  • IXTH10P60 Tech Specifications
    IXYS - IXTH10P60 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH10P60
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series -
    Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTH10
  • TheIXTH10P60is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 600V 10A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH10P60 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH10P60 IXTH102N25T IXTH110N10L2 IXTH02N450HV
Part Number IXTH10P60 IXTH102N25T IXTH110N10L2 IXTH02N450HV
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V - 10500 pF @ 25 V 246 pF @ 25 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drain to Source Voltage (Vdss) 600 V 250 V 100 V 4500 V
Vgs (Max) ±20V - ±20V ±20V
Operating Temperature -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 Variant
Series - Trench Linear L2™ -
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V - 260 nC @ 10 V 10.6 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 102A (Tc) 110A (Tc) 200mA (Tc)
Vgs(th) (Max) @ Id 5V @ 250µA - 4.5V @ 250µA 6.5V @ 250µA
Package Tube Tube Bulk Tube
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247HV
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Power Dissipation (Max) 300W (Tc) - 600W (Tc) 113W (Tc)
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V - 18mOhm @ 500mA, 10V 625Ohm @ 10mA, 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Base Product Number IXTH10 IXTH102 IXTH110 IXTH02
FET Type P-Channel N-Channel N-Channel N-Channel
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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