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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTH110N25T
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IXTH110N25TIXYS MOSFET N-CH 250V 110A TO247
Part NumberIXTH110N25T
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH110N25T
DescriptionMOSFET N-CH 250V 110A TO247
In stock4146
Data sheet
IXTH110N25T.pdf
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  • Specifications
  • Product Details - IXTH110N25T
  • IXTH110N25T Tech Specifications
    IXYS - IXTH110N25T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH110N25T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 1mA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series Trench
    Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V
    Power Dissipation (Max) 694W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 250 V
    Current - Continuous Drain (Id) @ 25°C 110A (Tc)
    Base Product Number IXTH110
  • TheIXTH110N25Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 250V 110A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 1mA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH110N25T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH110N25T IXTH110N10L2 IXTH120P065T IXTH12N150
Part Number IXTH110N25T IXTH110N10L2 IXTH120P065T IXTH12N150
Manufacturer IXYS IXYS IXYS IXYS
FET Type N-Channel N-Channel P-Channel N-Channel
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V 18mOhm @ 500mA, 10V 10mOhm @ 500mA, 10V 2Ohm @ 6A, 10V
Base Product Number IXTH110 IXTH110 IXTH120 IXTH12
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 110A (Tc) 120A (Tc) 12A (Tc)
Drain to Source Voltage (Vdss) 250 V 100 V 65 V 1500 V
FET Feature - - - -
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±15V ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V 10500 pF @ 25 V 13200 pF @ 25 V 3720 pF @ 25 V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 250µA 4V @ 250µA 4.5V @ 250µA
Series Trench Linear L2™ TrenchP™ -
Power Dissipation (Max) 694W (Tc) 600W (Tc) 298W (Tc) 890W (Tc)
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V 260 nC @ 10 V 185 nC @ 10 V 106 nC @ 10 V
Package Tube Bulk Tube Tube
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Through Hole Through Hole Through Hole Through Hole
  • IXYS Related Products
  • IXTH110N25T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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