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IXTH11P50IXYS MOSFET P-CH 500V 11A TO247
Part NumberIXTH11P50
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH11P50
DescriptionMOSFET P-CH 500V 11A TO247
In stock3914
Data sheet
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  • Specifications
  • Product Details - IXTH11P50
  • IXTH11P50 Tech Specifications
    IXYS - IXTH11P50 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH11P50
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series -
    Rds On (Max) @ Id, Vgs 750mOhm @ 5.5A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 500 V
    Current - Continuous Drain (Id) @ 25°C 11A (Tc)
    Base Product Number IXTH11
  • TheIXTH11P50is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 500V 11A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH11P50 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH11P50 IXTH10P50 IXTH102N15T IXTH110N25T
Part Number IXTH11P50 IXTH10P50 IXTH102N15T IXTH110N25T
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Series - - Trench Trench
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 160 nC @ 10 V 87 nC @ 10 V 157 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V 500 V 150 V 250 V
FET Feature - - - -
Rds On (Max) @ Id, Vgs 750mOhm @ 5.5A, 10V 900mOhm @ 5A, 10V 18mOhm @ 500mA, 10V 24mOhm @ 55A, 10V
FET Type P-Channel P-Channel N-Channel N-Channel
Package Tube Tube Tube Tube
Power Dissipation (Max) 300W (Tc) 300W (Tc) 455W (Tc) 694W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V 4700 pF @ 25 V 5220 pF @ 25 V 9400 pF @ 25 V
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Vgs (Max) ±20V ±20V ±20V ±20V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 1mA 4.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 10A (Tc) 102A (Tc) 110A (Tc)
Base Product Number IXTH11 IXTH10 IXTH102 IXTH110
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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