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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTH12N65X2
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IXTH12N65X2IXYS MOSFET N-CH 650V 12A TO247-3
Part NumberIXTH12N65X2
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH12N65X2
DescriptionMOSFET N-CH 650V 12A TO247-3
In stock9112
Data sheet
IXTH12N65X2.pdf
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  • Specifications
  • Product Details - IXTH12N65X2
  • IXTH12N65X2 Tech Specifications
    IXYS - IXTH12N65X2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH12N65X2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series Ultra X2
    Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V
    Power Dissipation (Max) 180W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 12A (Tc)
    Base Product Number IXTH12
  • TheIXTH12N65X2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 12A TO247-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH12N65X2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH12N65X2 IXTH12N150 IXTH12N70X2 IXTH11P50
Part Number IXTH12N65X2 IXTH12N150 IXTH12N70X2 IXTH11P50
Manufacturer IXYS IXYS IXYS IXYS
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 12A (Tc) 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V 3720 pF @ 25 V 960 pF @ 25 V 4700 pF @ 25 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Tube Tube Tube Tube
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Vgs (Max) ±30V ±30V ±30V ±20V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Power Dissipation (Max) 180W (Tc) 890W (Tc) 180W (Tc) 300W (Tc)
Base Product Number IXTH12 IXTH12 IXTH12 IXTH11
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Drain to Source Voltage (Vdss) 650 V 1500 V 700 V 500 V
Rds On (Max) @ Id, Vgs 300mOhm @ 6A, 10V 2Ohm @ 6A, 10V 300mOhm @ 6A, 10V 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 5V @ 250µA
Series Ultra X2 - Ultra X2 -
FET Type N-Channel N-Channel N-Channel P-Channel
Mounting Type Through Hole Through Hole Through Hole Through Hole
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 106 nC @ 10 V 19 nC @ 10 V 130 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
  • IXYS Related Products
  • IXTH12N65X2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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