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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTH160N10T
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IXTH160N10TIXYS MOSFET N-CH 100V 160A TO247
Part NumberIXTH160N10T
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH160N10T
DescriptionMOSFET N-CH 100V 160A TO247
In stock5471
Data sheet
IXTH160N10T.pdf
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  • Specifications
  • Product Details - IXTH160N10T
  • IXTH160N10T Tech Specifications
    IXYS - IXTH160N10T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH160N10T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series Trench
    Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
    Power Dissipation (Max) 430W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 160A (Tc)
    Base Product Number IXTH160
  • TheIXTH160N10Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 100V 160A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH160N10T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH160N10T IXTH14N100 IXTH140P10T IXTH152N085T
Part Number IXTH160N10T IXTH14N100 IXTH140P10T IXTH152N085T
Manufacturer IXYS IXYS IXYS IXYS
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drain to Source Voltage (Vdss) 100 V 1000 V 100 V 85 V
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
FET Feature - - - -
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V 820mOhm @ 500mA, 10V 12mOhm @ 70A, 10V 7mOhm @ 25A, 10V
Base Product Number IXTH160 IXTH14 IXTH140 IXTH152
Series Trench MegaMOS™ TrenchP™ TrenchMV™
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 14A (Tc) 140A (Tc) 152A (Tc)
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30V ±20V ±15V ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V 195 nC @ 10 V 400 nC @ 10 V 114 nC @ 10 V
FET Type N-Channel N-Channel P-Channel N-Channel
Power Dissipation (Max) 430W (Tc) 360W (Tc) 568W (Tc) 360W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 5650 pF @ 25 V 31400 pF @ 25 V 5500 pF @ 25 V
Package Tube Tube Tube Tube
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  • IXTH160N10T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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