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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTH2N170D2
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IXTH2N170D2IXYS MOSFET N-CH 1700V 2A TO247
Part NumberIXTH2N170D2
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTH2N170D2
DescriptionMOSFET N-CH 1700V 2A TO247
In stock1593
Data sheet
IXTH2N170D2.pdf
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  • Specifications
  • Product Details - IXTH2N170D2
  • IXTH2N170D2 Tech Specifications
    IXYS - IXTH2N170D2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTH2N170D2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id -
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-247 (IXTH)
    Series Depletion
    Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 0V
    Power Dissipation (Max) 568W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 3650 pF @ 10 V
    Gate Charge (Qg) (Max) @ Vgs 110 nC @ 5 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) 0V
    Drain to Source Voltage (Vdss) 1700 V
    Current - Continuous Drain (Id) @ 25°C 2A (Tj)
    Base Product Number IXTH2
  • TheIXTH2N170D2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1700V 2A TO247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTH2N170D2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTH2N170D2 IXTH24P20 IXTH250N075T IXTH260N055T2
Part Number IXTH2N170D2 IXTH24P20 IXTH250N075T IXTH260N055T2
Manufacturer IXYS IXYS IXYS IXYS
Series Depletion - TrenchMV™ TrenchT2™
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH) TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On) 0V 10V 10V 10V
Drain to Source Voltage (Vdss) 1700 V 200 V 75 V 55 V
Package Tube Tube Tube Tube
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 0V 150mOhm @ 500mA, 10V 4mOhm @ 50A, 10V 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id - 5V @ 250µA 4V @ 250µA 4V @ 250µA
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3650 pF @ 10 V 4200 pF @ 25 V 9900 pF @ 25 V 10800 pF @ 25 V
Base Product Number IXTH2 IXTH24 IXTH250 IXTH260
FET Feature Depletion Mode - - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±20V ±20V ±20V ±20V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 5 V 150 nC @ 10 V 200 nC @ 10 V 140 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 2A (Tj) 24A (Tc) 250A (Tc) 260A (Tc)
FET Type N-Channel P-Channel N-Channel N-Channel
Power Dissipation (Max) 568W (Tc) 300W (Tc) 550W (Tc) 480W (Tc)
  • IXYS Related Products
  • IXTH2N170D2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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