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IXTI10N60PIXYS MOSFET N-CH 600V 10A TO262
Part NumberIXTI10N60P
PackageTO-262-3 Long Leads, I²Pak, TO-262AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTI10N60P
DescriptionMOSFET N-CH 600V 10A TO262
In stock3444
Data sheet
IXTI10N60P.pdf
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  • Specifications
  • Product Details - IXTI10N60P
  • IXTI10N60P Tech Specifications
    IXYS - IXTI10N60P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTI10N60P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 100µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-262 (I2PAK)
    Series PolarHV™
    Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V
    Power Dissipation (Max) 200W (Tc)
    Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTI10
  • TheIXTI10N60Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 10A TO262 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 100µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTI10N60P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTI10N60P IXTH90N15T IXTI12N50P IXTH90P10P
Part Number IXTI10N60P IXTH90N15T IXTI12N50P IXTH90P10P
Manufacturer IXYS IXYS IXYS IXYS
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±30V ±30V ±30V ±20V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 200W (Tc) 455W (Tc) 200W (Tc) 462W (Tc)
Base Product Number IXTI10 IXTH90 IXTI12 IXTH90
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-247-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-247-3
Series PolarHV™ Trench Polar™ PolarP™
FET Feature - - - -
Package Tube Tube Tube Tube
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V 20mOhm @ 45A, 10V 500mOhm @ 6A, 10V 25mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 4.5V @ 1mA 5.5V @ 250µA 4V @ 250µA
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 80 nC @ 10 V 29 nC @ 10 V 120 nC @ 10 V
Supplier Device Package TO-262 (I2PAK) TO-247 (IXTH) TO-262 (I2PAK) TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 90A (Tc) 12A (Tc) 90A (Tc)
FET Type N-Channel N-Channel N-Channel P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V 4100 pF @ 25 V 1830 pF @ 25 V 5800 pF @ 25 V
Drain to Source Voltage (Vdss) 600 V 150 V 500 V 100 V
  • IXYS Related Products
  • IXTI10N60P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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