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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - ArraysIXTL2X200N085T
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IXTL2X200N085TIXYS MOSFET 2N-CH 85V 112A I5-PAK
Part NumberIXTL2X200N085T
PackageISOPLUSi5-Pak™
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTL2X200N085T
DescriptionMOSFET 2N-CH 85V 112A I5-PAK
In stock3322
Data sheet
1.IXTL2X200N085T.pdf 2.IXTL2X200N085T.pdf
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  • Specifications
  • Product Details - IXTL2X200N085T
  • IXTL2X200N085T Tech Specifications
    IXYS - IXTL2X200N085T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTL2X200N085T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISOPLUSi5-Pak™
    Series TrenchMV™
    Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
    Power - Max 150W
    Package / Case ISOPLUSi5-Pak™
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V
    Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
    FET Feature -
    Drain to Source Voltage (Vdss) 85V
    Current - Continuous Drain (Id) @ 25°C 112A
    Configuration 2 N-Channel (Dual)
    Base Product Number IXTL2X200
  • TheIXTL2X200N085Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET 2N-CH 85V 112A I5-PAK and it falls under the category of Transistors - FETs, MOSFETs - Arrays, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Technology of MOSFET (Metal Oxide). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTL2X200N085T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTL2X200N085T IXTL2X180N10T IXTL2X220N075T IXTL2X240N055T
Part Number IXTL2X200N085T IXTL2X180N10T IXTL2X220N075T IXTL2X240N055T
Manufacturer IXYS IXYS IXYS IXYS
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V 151nC @ 10V 165nC @ 10V 170nC @ 10V
Supplier Device Package ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ ISOPLUSi5-Pak™
Series TrenchMV™ Trench TrenchMV™ TrenchMV™
Package Tube Tube Tube Tube
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V 6900pF @ 25V 7700pF @ 25V 7600pF @ 25V
Package / Case ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ ISOPLUSi5-Pak™
Drain to Source Voltage (Vdss) 85V 100V 75V 55V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Current - Continuous Drain (Id) @ 25°C 112A 100A 120A 140A
Power - Max 150W 150W 150W 150W
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V 7.4mOhm @ 50A, 10V 5.5mOhm @ 50A, 10V 4.4mOhm @ 50A, 10V
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Base Product Number IXTL2X200 IXTL2 IXTL2X200 IXTL2X240
FET Feature - - - -
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
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  • IXTL2X200N085T Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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