Name: IXYS IXTP18N60PM
Brand: IXYS
SKU: IXTP18N60PM
Availability: InStock

Specifications
Product Details - IXTP18N60PM

IXTP18N60PM Tech Specifications
IXYS - IXTP18N60PM technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP18N60PM

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id 5.5V @ 250µA

Vgs (Max) ±30V

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-220 Isolated Tab

Series Polar

Rds On (Max) @ Id, Vgs 420mOhm @ 9A, 10V

Power Dissipation (Max) 90W (Tc)

Package / Case TO-220-3 Full Pack, Isolated Tab

Package Tube

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V

FET Type N-Channel

FET Feature -

Drive Voltage (Max Rds On, Min Rds On) 10V

Drain to Source Voltage (Vdss) 600 V

Current - Continuous Drain (Id) @ 25°C 9A (Tc)

Base Product Number IXTP18
TheIXTP18N60PMis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 9A TO220 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP18N60PM or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXTP18N60PM	IXTP180N055T	IXTP160N085T	IXTP1R4N60P
Manufacturer	IXYS	IXYS	IXYS	IXYS
Vgs (Max)	±30V	-	±20V	±30V
Supplier Device Package	TO-220 Isolated Tab	TO-220-3	TO-220-3	TO-220-3
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	600 V	55 V	85 V	600 V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Base Product Number	IXTP18	IXTP180	IXTP160	IXTP1
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V	-	164 nC @ 10 V	5.2 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V	-	10V	10V
Rds On (Max) @ Id, Vgs	420mOhm @ 9A, 10V	-	6mOhm @ 50A, 10V	9Ohm @ 700mA, 10V
Package	Tube	Tube	Tube	Tube
Current - Continuous Drain (Id) @ 25°C	9A (Tc)	180A (Tc)	160A (Tc)	1.4A (Tc)
Series	Polar	-	-	PolarHV™
FET Feature	-	-	-	-
Vgs(th) (Max) @ Id	5.5V @ 250µA	4V @ 1mA	4V @ 1mA	5.5V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 25 V	-	6400 pF @ 25 V	140 pF @ 25 V
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab	TO-220-3	TO-220-3	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)	-	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	90W (Tc)	-	360W (Tc)	50W (Tc)

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

Ixys-Electronics.com

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