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IXTP2N80IXYS MOSFET N-CH 800V 2A TO220AB
Part NumberIXTP2N80
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP2N80
DescriptionMOSFET N-CH 800V 2A TO220AB
In stock2882
Data sheet
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  • Specifications
  • Product Details - IXTP2N80
  • IXTP2N80 Tech Specifications
    IXYS - IXTP2N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP2N80
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series -
    Rds On (Max) @ Id, Vgs 6.2Ohm @ 500mA, 10V
    Power Dissipation (Max) 54W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 800 V
    Current - Continuous Drain (Id) @ 25°C 2A (Tc)
    Base Product Number IXTP2
  • TheIXTP2N80is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 800V 2A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP2N80 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP2N80 IXTP27N20T IXTP270N04T4 IXTP2N65X2
Part Number IXTP2N80 IXTP27N20T IXTP270N04T4 IXTP2N65X2
Manufacturer IXYS IXYS IXYS IXYS
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V - 182 nC @ 10 V 4.3 nC @ 10 V
Vgs (Max) ±20V - ±15V ±30V
Power Dissipation (Max) 54W (Tc) - 375W (Tc) 55W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Drain to Source Voltage (Vdss) 800 V 200 V 40 V 650 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 27A (Tc) 270A (Tc) 2A (Tc)
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220
Mounting Type Through Hole Through Hole Through Hole Through Hole
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Package Tube Tube Tube Tube
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Series - Trench Trench Ultra X2
FET Type N-Channel N-Channel N-Channel N-Channel
Base Product Number IXTP2 IXTP27 IXTP270 IXTP2
Vgs(th) (Max) @ Id 5.5V @ 250µA - 4V @ 250µA 5V @ 250µA
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V - 9140 pF @ 25 V 180 pF @ 25 V
Rds On (Max) @ Id, Vgs 6.2Ohm @ 500mA, 10V - 2.4mOhm @ 50A, 10V 2.3Ohm @ 1A, 10V
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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