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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP2R4N120P
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IXTP2R4N120PIXYS MOSFET N-CH 1200V 2.4A TO220AB
Part NumberIXTP2R4N120P
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP2R4N120P
DescriptionMOSFET N-CH 1200V 2.4A TO220AB
In stock6103
Data sheet
IXTP2R4N120P.pdf
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  • Specifications
  • Product Details - IXTP2R4N120P
  • IXTP2R4N120P Tech Specifications
    IXYS - IXTP2R4N120P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP2R4N120P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series Polar
    Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
    Power Dissipation (Max) 125W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1207 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
    Base Product Number IXTP2
  • TheIXTP2R4N120Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1200V 2.4A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP2R4N120P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP2R4N120P IXTP32P05T IXTP28P065T IXTP28N15P
Part Number IXTP2R4N120P IXTP32P05T IXTP28P065T IXTP28N15P
Manufacturer IXYS IXYS IXYS IXYS
Base Product Number IXTP2 IXTP32 IXTP28 IXTP28
Series Polar TrenchP™ TrenchP™ -
Power Dissipation (Max) 125W (Tc) 83W (Tc) 83W (Tc) -
Vgs (Max) ±20V ±15V ±15V -
FET Feature - - - -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 39mOhm @ 500mA, 10V 45mOhm @ 14A, 10V -
Input Capacitance (Ciss) (Max) @ Vds 1207 pF @ 25 V 1975 pF @ 25 V 2030 pF @ 25 V -
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 -
Mounting Type Through Hole Through Hole Through Hole -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
FET Type N-Channel P-Channel P-Channel -
Drain to Source Voltage (Vdss) 1200 V 50 V 65 V -
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 32A (Tc) 28A (Tc) -
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V -
Package / Case TO-220-3 TO-220-3 TO-220-3 -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Package Tube Tube Tube Tube
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  • IXTP2R4N120P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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