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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP300N04T2
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IXTP300N04T2IXYS MOSFET N-CH 40V 300A TO220AB
Part NumberIXTP300N04T2
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP300N04T2
DescriptionMOSFET N-CH 40V 300A TO220AB
In stock7386
Data sheet
IXTP300N04T2.pdf
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  • Specifications
  • Product Details - IXTP300N04T2
  • IXTP300N04T2 Tech Specifications
    IXYS - IXTP300N04T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP300N04T2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series TrenchT2™
    Rds On (Max) @ Id, Vgs 2.5mOhm @ 500mA, 10V
    Power Dissipation (Max) 480W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 40 V
    Current - Continuous Drain (Id) @ 25°C 300A (Tc)
    Base Product Number IXTP300
  • TheIXTP300N04T2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 40V 300A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP300N04T2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP300N04T2 IXTP2N100P IXTP36N30P IXTP30N25L2
Part Number IXTP300N04T2 IXTP2N100P IXTP36N30P IXTP30N25L2
Manufacturer IXYS IXYS IXYS IXYS
Drain to Source Voltage (Vdss) 40 V 1000 V 300 V 250 V
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220
Package Tube Tube Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V 655 pF @ 25 V 2250 pF @ 25 V 3200 pF @ 25 V
Power Dissipation (Max) 480W (Tc) 86W (Tc) 300W (Tc) 355W (Tc)
FET Feature - - - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Series TrenchT2™ Polar PolarHT™ Linear L2™
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 24.3 nC @ 10 V 70 nC @ 10 V 130 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 2A (Tc) 36A (Tc) 30A (Tc)
Vgs (Max) ±20V ±20V ±30V ±20V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Rds On (Max) @ Id, Vgs 2.5mOhm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 110mOhm @ 18A, 10V 140mOhm @ 15A, 10V
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Base Product Number IXTP300 IXTP2 IXTP36 IXTP30
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 100µA 5.5V @ 250µA 4.5V @ 250µA
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  • IXTP300N04T2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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