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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP30N25L2
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IXTP30N25L2IXYS MOSFET N-CH 250V 30A TO220AB
Part NumberIXTP30N25L2
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP30N25L2
DescriptionMOSFET N-CH 250V 30A TO220AB
In stock1674
Data sheet
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  • Specifications
  • Product Details - IXTP30N25L2
  • IXTP30N25L2 Tech Specifications
    IXYS - IXTP30N25L2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP30N25L2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220
    Series Linear L2™
    Rds On (Max) @ Id, Vgs 140mOhm @ 15A, 10V
    Power Dissipation (Max) 355W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 250 V
    Current - Continuous Drain (Id) @ 25°C 30A (Tc)
    Base Product Number IXTP30
  • TheIXTP30N25L2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 250V 30A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP30N25L2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP30N25L2 IXTP2N80 IXTP28P065T IXTP32P05T
Part Number IXTP30N25L2 IXTP2N80 IXTP28P065T IXTP32P05T
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V 440 pF @ 25 V 2030 pF @ 25 V 1975 pF @ 25 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
FET Feature - - - -
Base Product Number IXTP30 IXTP2 IXTP28 IXTP32
Drain to Source Voltage (Vdss) 250 V 800 V 65 V 50 V
Series Linear L2™ - TrenchP™ TrenchP™
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 2A (Tc) 28A (Tc) 32A (Tc)
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 22 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V
Rds On (Max) @ Id, Vgs 140mOhm @ 15A, 10V 6.2Ohm @ 500mA, 10V 45mOhm @ 14A, 10V 39mOhm @ 500mA, 10V
Supplier Device Package TO-220 TO-220-3 TO-220-3 TO-220-3
FET Type N-Channel N-Channel P-Channel P-Channel
Vgs(th) (Max) @ Id 4.5V @ 250µA 5.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Vgs (Max) ±20V ±20V ±15V ±15V
Package Tube Tube Tube Tube
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Power Dissipation (Max) 355W (Tc) 54W (Tc) 83W (Tc) 83W (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
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  • IXTP30N25L2 Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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