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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP32N65X
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IXTP32N65XIXYS MOSFET N-CH 650V 32A TO220-3
Part NumberIXTP32N65X
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP32N65X
DescriptionMOSFET N-CH 650V 32A TO220-3
In stock4266
Data sheet
IXTP32N65X.pdf
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  • Specifications
  • Product Details - IXTP32N65X
  • IXTP32N65X Tech Specifications
    IXYS - IXTP32N65X technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP32N65X
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series Ultra X
    Rds On (Max) @ Id, Vgs 135mOhm @ 16A, 10V
    Power Dissipation (Max) 500W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2205 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 32A (Tc)
    Base Product Number IXTP32
  • TheIXTP32N65Xis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 32A TO220-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP32N65X or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP32N65X IXTP300N04T2 IXTP36N20T IXTP36P15P
Part Number IXTP32N65X IXTP300N04T2 IXTP36N20T IXTP36P15P
Manufacturer IXYS IXYS IXYS IXYS
Base Product Number IXTP32 IXTP300 IXTP36 IXTP36
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 145 nC @ 10 V - 55 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
FET Feature - - - -
Drain to Source Voltage (Vdss) 650 V 40 V 200 V 150 V
Package Tube Tube Tube Tube
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 300A (Tc) 36A (Tc) 36A (Tc)
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
FET Type N-Channel N-Channel N-Channel P-Channel
Series Ultra X TrenchT2™ Trench Polar P3™
Vgs (Max) ±30V ±20V - ±20V
Vgs(th) (Max) @ Id 5.5V @ 250µA 4V @ 250µA - 4.5V @ 250µA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds 2205 pF @ 25 V 10700 pF @ 25 V - 3100 pF @ 25 V
Rds On (Max) @ Id, Vgs 135mOhm @ 16A, 10V 2.5mOhm @ 500mA, 10V - 110mOhm @ 18A, 10V
Power Dissipation (Max) 500W (Tc) 480W (Tc) - 300W (Tc)
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  • IXTP32N65X Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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