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IXTP32N65XMIXYS MOSFET N-CH 650V 14A TO220-3
Part NumberIXTP32N65XM
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP32N65XM
DescriptionMOSFET N-CH 650V 14A TO220-3
In stock4672
Data sheet
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  • Specifications
  • Product Details - IXTP32N65XM
  • IXTP32N65XM Tech Specifications
    IXYS - IXTP32N65XM technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP32N65XM
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series Ultra X
    Rds On (Max) @ Id, Vgs 135mOhm @ 16A, 10V
    Power Dissipation (Max) 78W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2206 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 14A (Tc)
    Base Product Number IXTP32
  • TheIXTP32N65XMis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 14A TO220-3 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP32N65XM or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP32N65XM IXTP32N65X IXTP38N15T IXTP32P05T
Part Number IXTP32N65XM IXTP32N65X IXTP38N15T IXTP32P05T
Manufacturer IXYS IXYS IXYS IXYS
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 54 nC @ 10 V - 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2206 pF @ 25 V 2205 pF @ 25 V - 1975 pF @ 25 V
Power Dissipation (Max) 78W (Tc) 500W (Tc) - 83W (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 32A (Tc) 38A (Tc) 32A (Tc)
Package Tube Tube Tube Tube
Drain to Source Voltage (Vdss) 650 V 650 V 150 V 50 V
Base Product Number IXTP32 IXTP32 IXTP38 IXTP32
FET Type N-Channel N-Channel N-Channel P-Channel
Series Ultra X Ultra X Trench TrenchP™
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA - 4.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Vgs (Max) ±30V ±30V - ±15V
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Rds On (Max) @ Id, Vgs 135mOhm @ 16A, 10V 135mOhm @ 16A, 10V - 39mOhm @ 500mA, 10V
FET Feature - - - -
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Certifications & Memberships We strictly controls the quality of products, environment and services.Through the ISO certification of the third party. View More >

Brand introduction

IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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