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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP34N65X2
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IXTP34N65X2IXYS MOSFET N-CH 650V 34A TO220AB
Part NumberIXTP34N65X2
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP34N65X2
DescriptionMOSFET N-CH 650V 34A TO220AB
In stock6130
Data sheet
IXTP34N65X2.pdf
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  • Specifications
  • Product Details - IXTP34N65X2
  • IXTP34N65X2 Tech Specifications
    IXYS - IXTP34N65X2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP34N65X2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series Ultra X2
    Rds On (Max) @ Id, Vgs 96mOhm @ 17A, 10V
    Power Dissipation (Max) 540W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 34A (Tc)
    Base Product Number IXTP34
  • TheIXTP34N65X2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 34A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP34N65X2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP34N65X2 IXTP2R4N50P IXTP30N25L2 IXTP3N100P
Part Number IXTP34N65X2 IXTP2R4N50P IXTP30N25L2 IXTP3N100P
Manufacturer IXYS IXYS IXYS IXYS
Base Product Number IXTP34 IXTP2 IXTP30 IXTP3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Drain to Source Voltage (Vdss) 650 V 500 V 250 V 1000 V
Power Dissipation (Max) 540W (Tc) 55W (Tc) 355W (Tc) 125W (Tc)
FET Feature - - - -
Series Ultra X2 PolarHV™ Linear L2™ Polar P3™
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 2.4A (Tc) 30A (Tc) 3A (Tc)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package Tube Tube Tube Tube
Vgs (Max) ±30V ±30V ±20V ±20V
Vgs(th) (Max) @ Id 5V @ 250µA 5.5V @ 25µA 4.5V @ 250µA 4.5V @ 250µA
FET Type N-Channel N-Channel N-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Supplier Device Package TO-220-3 TO-220-3 TO-220 TO-220-3
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 6.1 nC @ 10 V 130 nC @ 10 V 39 nC @ 10 V
Rds On (Max) @ Id, Vgs 96mOhm @ 17A, 10V 3.75Ohm @ 500mA, 10V 140mOhm @ 15A, 10V 4.8Ohm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 240 pF @ 25 V 3200 pF @ 25 V 1100 pF @ 25 V
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  • IXTP34N65X2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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