Name: IXYS IXTP36N20T
Brand: IXYS
SKU: IXTP36N20T
Availability: InStock

Specifications
Product Details - IXTP36N20T

IXTP36N20T Tech Specifications
IXYS - IXTP36N20T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP36N20T

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id -

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-220-3

Series Trench

Rds On (Max) @ Id, Vgs -

Power Dissipation (Max) -

Package / Case TO-220-3

Package Tube

Operating Temperature -

Mounting Type Through Hole

FET Type N-Channel

FET Feature -

Drain to Source Voltage (Vdss) 200 V

Current - Continuous Drain (Id) @ 25°C 36A (Tc)

Base Product Number IXTP36
TheIXTP36N20Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 200V 36A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Technology of MOSFET (Metal Oxide). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP36N20T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXTP36N20T	IXTP32P05T	IXTP34N65X2	IXTP32N20T
Manufacturer	IXYS	IXYS	IXYS	IXYS
Current - Continuous Drain (Id) @ 25°C	36A (Tc)	32A (Tc)	34A (Tc)	32A (Tc)
Power Dissipation (Max)	-	83W (Tc)	540W (Tc)	200W (Tc)
Package	Tube	Tube	Tube	Tube
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Drain to Source Voltage (Vdss)	200 V	50 V	650 V	200 V
FET Type	N-Channel	P-Channel	N-Channel	N-Channel
Base Product Number	IXTP36	IXTP32	IXTP34	IXTP32
Vgs(th) (Max) @ Id	-	4.5V @ 250µA	5V @ 250µA	4.5V @ 250µA
Operating Temperature	-	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Supplier Device Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Series	Trench	TrenchP™	Ultra X2	Trench
FET Feature	-	-	-	-
Rds On (Max) @ Id, Vgs	-	39mOhm @ 500mA, 10V	96mOhm @ 17A, 10V	72mOhm @ 16A, 10V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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