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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP36N30P
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IXTP36N30PIXYS MOSFET N-CH 300V 36A TO220AB
Part NumberIXTP36N30P
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP36N30P
DescriptionMOSFET N-CH 300V 36A TO220AB
In stock8659
Data sheet
IXTP36N30P.pdf
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  • Specifications
  • Product Details - IXTP36N30P
  • IXTP36N30P Tech Specifications
    IXYS - IXTP36N30P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP36N30P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series PolarHT™
    Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 36A (Tc)
    Base Product Number IXTP36
  • TheIXTP36N30Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 36A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP36N30P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP36N30P IXTP3N50D2 IXTP32N65XM IXTP36N20T
Part Number IXTP36N30P IXTP3N50D2 IXTP32N65XM IXTP36N20T
Manufacturer IXYS IXYS IXYS IXYS
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V 1.5Ohm @ 1.5A, 0V 135mOhm @ 16A, 10V -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
FET Feature - Depletion Mode - -
Series PolarHT™ Depletion Ultra X Trench
Drain to Source Voltage (Vdss) 300 V 500 V 650 V 200 V
Power Dissipation (Max) 300W (Tc) 125W (Tc) 78W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs(th) (Max) @ Id 5.5V @ 250µA - 5.5V @ 250µA -
Package Tube Tube Tube Tube
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 3A (Tc) 14A (Tc) 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V 1070 pF @ 25 V 2206 pF @ 25 V -
Base Product Number IXTP36 IXTP3 IXTP32 IXTP36
FET Type N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±30V ±20V ±30V -
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 40 nC @ 5 V 54 nC @ 10 V -
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  • IXTP36N30P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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