Name: IXYS IXTP36N30T
Brand: IXYS
SKU: IXTP36N30T
Availability: InStock

Specifications
Product Details - IXTP36N30T

IXTP36N30T Tech Specifications
IXYS - IXTP36N30T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP36N30T

Manufacturer IXYS / Littelfuse

Vgs(th) (Max) @ Id -

Technology MOSFET (Metal Oxide)

Supplier Device Package TO-220-3

Series Trench

Rds On (Max) @ Id, Vgs 110mOhm @ 500mA, 10V

Power Dissipation (Max) -

Package / Case TO-220-3

Package Tube

Operating Temperature -

Mounting Type Through Hole

Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V

FET Type N-Channel

FET Feature -

Drain to Source Voltage (Vdss) 300 V

Current - Continuous Drain (Id) @ 25°C 36A (Tc)

Base Product Number IXTP36
TheIXTP36N30Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 36A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Technology of MOSFET (Metal Oxide). Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP36N30T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute
Part Number	IXTP36N30T	IXTP3N100P	IXTP3N50P	IXTP3N110
Manufacturer	IXYS	IXYS	IXYS	IXYS
Drain to Source Voltage (Vdss)	300 V	1000 V	500 V	1100 V
Input Capacitance (Ciss) (Max) @ Vds	2250 pF @ 25 V	1100 pF @ 25 V	409 pF @ 25 V	1350 pF @ 25 V
Base Product Number	IXTP36	IXTP3	IXTP3	IXTP3
Operating Temperature	-	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Package	Tube	Tube	Tube	Tube
Vgs(th) (Max) @ Id	-	4.5V @ 250µA	5.5V @ 50µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V	39 nC @ 10 V	9.3 nC @ 10 V	42 nC @ 10 V
Supplier Device Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Rds On (Max) @ Id, Vgs	110mOhm @ 500mA, 10V	4.8Ohm @ 1.5A, 10V	2Ohm @ 1.8A, 10V	4Ohm @ 1.5A, 10V
Series	Trench	Polar P3™	PolarHV™	-
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Power Dissipation (Max)	-	125W (Tc)	70W (Tc)	150W (Tc)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
FET Feature	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	36A (Tc)	3A (Tc)	3.6A (Tc)	3A (Tc)

Brand introduction

IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

IXYS / Littelfuse

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