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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP3N100D2
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IXTP3N100D2IXYS MOSFET N-CH 1000V 3A TO220AB
Part NumberIXTP3N100D2
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP3N100D2
DescriptionMOSFET N-CH 1000V 3A TO220AB
In stock11715
Data sheet
IXTP3N100D2.pdf
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  • Specifications
  • Product Details - IXTP3N100D2
  • IXTP3N100D2 Tech Specifications
    IXYS - IXTP3N100D2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP3N100D2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id -
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series Depletion
    Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V
    Power Dissipation (Max) 125W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) -
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 3A (Tc)
    Base Product Number IXTP3
  • TheIXTP3N100D2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 3A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of - and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP3N100D2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP3N100D2 IXTP44N15T IXTP32N65XM IXTP32P20T
Part Number IXTP3N100D2 IXTP44N15T IXTP32N65XM IXTP32P20T
Manufacturer IXYS IXYS IXYS IXYS
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Tube Tube Tube Tube
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V - 54 nC @ 10 V 185 nC @ 10 V
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs (Max) ±20V - ±30V ±15V
FET Feature Depletion Mode - - -
Series Depletion Trench Ultra X TrenchP™
Mounting Type Through Hole Through Hole Through Hole Through Hole
Power Dissipation (Max) 125W (Tc) - 78W (Tc) 300W (Tc)
FET Type N-Channel N-Channel N-Channel P-Channel
Drain to Source Voltage (Vdss) 1000 V 150 V 650 V 200 V
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs(th) (Max) @ Id - - 5.5V @ 250µA 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) - - 10V 10V
Base Product Number IXTP3 IXTP44 IXTP32 IXTP32
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 44A (Tc) 14A (Tc) 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V - 2206 pF @ 25 V 14500 pF @ 25 V
Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V - 135mOhm @ 16A, 10V 130mOhm @ 16A, 10V
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
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  • IXTP3N100D2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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