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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP3N120
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IXTP3N120IXYS MOSFET N-CH 1200V 3A TO220AB
Part NumberIXTP3N120
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP3N120
DescriptionMOSFET N-CH 1200V 3A TO220AB
In stock5752
Data sheet
IXTP3N120.pdf
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  • Specifications
  • Product Details - IXTP3N120
  • IXTP3N120 Tech Specifications
    IXYS - IXTP3N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP3N120
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series HiPerFET™
    Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V
    Power Dissipation (Max) 200W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1200 V
    Current - Continuous Drain (Id) @ 25°C 3A (Tc)
    Base Product Number IXTP3
  • TheIXTP3N120is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1200V 3A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP3N120 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP3N120 IXTP44N10T IXTP3N50P IXTP44N30T
Part Number IXTP3N120 IXTP44N10T IXTP3N50P IXTP44N30T
Manufacturer IXYS IXYS IXYS IXYS
Vgs (Max) ±20V ±30V ±30V -
Power Dissipation (Max) 200W (Tc) 130W (Tc) 70W (Tc) -
FET Feature - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drain to Source Voltage (Vdss) 1200 V 100 V 500 V 300 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 33 nC @ 10 V 9.3 nC @ 10 V -
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1262 pF @ 25 V 409 pF @ 25 V -
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V 30mOhm @ 22A, 10V 2Ohm @ 1.8A, 10V -
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 25µA 5.5V @ 50µA -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Package Tube Tube Tube Tube
FET Type N-Channel N-Channel N-Channel N-Channel
Series HiPerFET™ Trench PolarHV™ Trench
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Base Product Number IXTP3 IXTP44 IXTP3 IXTP44
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 44A (Tc) 3.6A (Tc) 44A (Tc)
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  • IXTP3N120 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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