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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP3N60P
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IXTP3N60PIXYS MOSFET N-CH 600V 3A TO220AB
Part NumberIXTP3N60P
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP3N60P
DescriptionMOSFET N-CH 600V 3A TO220AB
In stock3273
Data sheet
1.IXTP3N60P.pdf 2.IXTP3N60P.pdf
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  • Specifications
  • Product Details - IXTP3N60P
  • IXTP3N60P Tech Specifications
    IXYS - IXTP3N60P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP3N60P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 50µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series PolarHV™
    Rds On (Max) @ Id, Vgs 2.9Ohm @ 500mA, 10V
    Power Dissipation (Max) 70W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 411 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 3A (Tc)
    Base Product Number IXTP3
  • TheIXTP3N60Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 3A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 50µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP3N60P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP3N60P IXTP38N15T IXTP36N30P IXTP3N110
Part Number IXTP3N60P IXTP38N15T IXTP36N30P IXTP3N110
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Vgs(th) (Max) @ Id 5.5V @ 50µA - 5.5V @ 250µA 5V @ 250µA
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V - 70 nC @ 10 V 42 nC @ 10 V
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 70W (Tc) - 300W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Rds On (Max) @ Id, Vgs 2.9Ohm @ 500mA, 10V - 110mOhm @ 18A, 10V 4Ohm @ 1.5A, 10V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 38A (Tc) 36A (Tc) 3A (Tc)
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Series PolarHV™ Trench PolarHT™ -
Drain to Source Voltage (Vdss) 600 V 150 V 300 V 1100 V
Vgs (Max) ±30V - ±30V ±20V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Tube Tube Tube Tube
Base Product Number IXTP3 IXTP38 IXTP36 IXTP3
Input Capacitance (Ciss) (Max) @ Vds 411 pF @ 25 V - 2250 pF @ 25 V 1350 pF @ 25 V
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  • IXTP3N60P Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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