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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP48N20T
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IXTP48N20TIXYS MOSFET N-CH 200V 48A TO220AB
Part NumberIXTP48N20T
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP48N20T
DescriptionMOSFET N-CH 200V 48A TO220AB
In stock12294
Data sheet
IXTP48N20T.pdf
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  • Specifications
  • Product Details - IXTP48N20T
  • IXTP48N20T Tech Specifications
    IXYS - IXTP48N20T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP48N20T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220-3
    Series Trench
    Rds On (Max) @ Id, Vgs 50mOhm @ 24A, 10V
    Power Dissipation (Max) 250W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 200 V
    Current - Continuous Drain (Id) @ 25°C 48A (Tc)
    Base Product Number IXTP48
  • TheIXTP48N20Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 200V 48A TO220AB and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP48N20T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP48N20T IXTP4N80P IXTP50N25T IXTP44N15T
Part Number IXTP48N20T IXTP4N80P IXTP50N25T IXTP44N15T
Manufacturer IXYS IXYS IXYS IXYS
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 250W (Tc) 100W (Tc) 400W (Tc) -
Series Trench Polar Trench Trench
FET Feature - - - -
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 14.2 nC @ 10 V 78 nC @ 10 V -
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 750 pF @ 25 V 4000 pF @ 25 V -
Vgs(th) (Max) @ Id 4.5V @ 250µA 5.5V @ 100µA 5V @ 1mA -
Rds On (Max) @ Id, Vgs 50mOhm @ 24A, 10V 3.4Ohm @ 500mA, 10V 50mOhm @ 25A, 10V -
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 3.6A (Tc) 50A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (Max) ±30V ±30V ±30V -
Package Tube Tube Tube Tube
Base Product Number IXTP48 IXTP4 IXTP50 IXTP44
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole Through Hole Through Hole
Drain to Source Voltage (Vdss) 200 V 800 V 250 V 150 V
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  • IXTP48N20T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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