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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTP4N65X2
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IXTP4N65X2IXYS MOSFET N-CH 650V 4A TO220
Part NumberIXTP4N65X2
PackageTO-220-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTP4N65X2
DescriptionMOSFET N-CH 650V 4A TO220
In stock21008
Data sheet
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  • Specifications
  • Product Details - IXTP4N65X2
  • IXTP4N65X2 Tech Specifications
    IXYS - IXTP4N65X2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTP4N65X2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-220
    Series Ultra X2
    Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V
    Power Dissipation (Max) 80W (Tc)
    Package / Case TO-220-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 4A (Tc)
    Base Product Number IXTP4
  • TheIXTP4N65X2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 650V 4A TO220 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTP4N65X2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTP4N65X2 IXTP4N70X2M IXTP48N20TM IXTP50N20PM
Part Number IXTP4N65X2 IXTP4N70X2M IXTP48N20TM IXTP50N20PM
Manufacturer IXYS IXYS IXYS IXYS
Series Ultra X2 Ultra X2 Trench Polar
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 48A (Tc) 20A (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Power Dissipation (Max) 80W (Tc) 30W (Tc) 250W (Tc) 90W (Tc)
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 5V @ 250µA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Package Tube Tube Tube Tube
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab
FET Feature - - - -
Drain to Source Voltage (Vdss) 650 V 700 V 200 V 200 V
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V 11.8 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V 850mOhm @ 2A, 10V 50mOhm @ 24A, 10V 60mOhm @ 25A, 10V
Supplier Device Package TO-220 TO-220 Isolated Tab TO-220 Isolated Tab TO-220 Isolated Tab
Vgs (Max) ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V 386 pF @ 25 V 3090 pF @ 25 V 2720 pF @ 25 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Base Product Number IXTP4 IXTP4 IXTP48 IXTP50
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  • IXTP4N65X2 Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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