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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTQ14N60P
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IXTQ14N60PIXYS MOSFET N-CH 600V 14A TO3P
Part NumberIXTQ14N60P
PackageTO-3P-3, SC-65-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTQ14N60P
DescriptionMOSFET N-CH 600V 14A TO3P
In stock7830
Data sheet
1.IXTQ14N60P.pdf 2.IXTQ14N60P.pdf
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  • Specifications
  • Product Details - IXTQ14N60P
  • IXTQ14N60P Tech Specifications
    IXYS - IXTQ14N60P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTQ14N60P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P
    Series Polar
    Rds On (Max) @ Id, Vgs 550mOhm @ 7A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-3P-3, SC-65-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 14A (Tc)
    Base Product Number IXTQ14
  • TheIXTQ14N60Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 600V 14A TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTQ14N60P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTQ14N60P IXTQ170N10P IXTQ150N06P IXTQ160N10T
Part Number IXTQ14N60P IXTQ170N10P IXTQ150N06P IXTQ160N10T
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Package Tube Tube Tube Tube
Vgs(th) (Max) @ Id 5.5V @ 250µA 5V @ 250µA 5V @ 250µA 4.5V @ 250µA
Vgs (Max) ±30V ±20V ±20V ±30V
Power Dissipation (Max) 300W (Tc) 715W (Tc) 480W (Tc) 430W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 6000 pF @ 25 V 3000 pF @ 25 V 6600 pF @ 25 V
Rds On (Max) @ Id, Vgs 550mOhm @ 7A, 10V 9mOhm @ 500mA, 10V 10mOhm @ 75A, 10V 7mOhm @ 25A, 10V
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
FET Feature - - - -
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 170A (Tc) 150A (Tc) 160A (Tc)
Base Product Number IXTQ14 IXTQ170 IXTQ150 IXTQ160
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 198 nC @ 10 V 118 nC @ 10 V 132 nC @ 10 V
Series Polar Polar Polar Trench
Drain to Source Voltage (Vdss) 600 V 100 V 60 V 100 V
FET Type N-Channel N-Channel N-Channel N-Channel
Mounting Type Through Hole Through Hole Through Hole Through Hole
  • IXYS Related Products
  • IXTQ14N60P Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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