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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTQ48N65X2M
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IXTQ48N65X2MIXYS DISCRETE MOSFET 48A 650V X2 TO3P
Part NumberIXTQ48N65X2M
PackageTO-3P-3, SC-65-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTQ48N65X2M
DescriptionDISCRETE MOSFET 48A 650V X2 TO3P
In stock2234
Data sheet
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  • Specifications
  • Product Details - IXTQ48N65X2M
  • IXTQ48N65X2M Tech Specifications
    IXYS - IXTQ48N65X2M technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTQ48N65X2M
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P
    Series -
    Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V
    Power Dissipation (Max) 70W (Tc)
    Package / Case TO-3P-3, SC-65-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 650 V
    Current - Continuous Drain (Id) @ 25°C 48A (Tc)
  • TheIXTQ48N65X2Mis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is DISCRETE MOSFET 48A 650V X2 TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTQ48N65X2M or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTQ48N65X2M IXTQ480P2 IXTQ60N20T IXTQ60N20L2
Part Number IXTQ48N65X2M IXTQ480P2 IXTQ60N20T IXTQ60N20L2
Manufacturer IXYS IXYS IXYS IXYS
FET Type N-Channel N-Channel N-Channel N-Channel
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 52A (Tc) 60A (Tc) 60A (Tc)
Package Tube Tube Tube Tube
FET Feature - - - -
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V 120mOhm @ 26A, 10V 40mOhm @ 30A, 10V 45mOhm @ 30A, 10V
Series - PolarP2™ Trench Linear L2™
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 250µA 5V @ 250µA 4.5V @ 250µA
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V 6800 pF @ 25 V 4530 pF @ 25 V 10500 pF @ 25 V
Vgs (Max) ±30V ±30V ±20V ±20V
Power Dissipation (Max) 70W (Tc) 960W (Tc) 500W (Ta) 540W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 500 V 200 V 200 V
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V 108 nC @ 10 V 73 nC @ 10 V 255 nC @ 10 V
  • IXYS Related Products
  • IXTQ48N65X2M Download Datasheets (0)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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