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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTQ50N20P
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IXTQ50N20PIXYS MOSFET N-CH 200V 50A TO3P
Part NumberIXTQ50N20P
PackageTO-3P-3, SC-65-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTQ50N20P
DescriptionMOSFET N-CH 200V 50A TO3P
In stock8755
Data sheet
1.IXTQ50N20P.pdf 2.IXTQ50N20P.pdf
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  • Specifications
  • Product Details - IXTQ50N20P
  • IXTQ50N20P Tech Specifications
    IXYS - IXTQ50N20P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTQ50N20P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P
    Series Polar
    Rds On (Max) @ Id, Vgs 60mOhm @ 50A, 10V
    Power Dissipation (Max) 360W (Tc)
    Package / Case TO-3P-3, SC-65-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2720 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 200 V
    Current - Continuous Drain (Id) @ 25°C 50A (Tc)
    Base Product Number IXTQ50
  • TheIXTQ50N20Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 200V 50A TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTQ50N20P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTQ50N20P IXTQ60N20T IXTQ48N65X2M IXTQ44N50P
Part Number IXTQ50N20P IXTQ60N20T IXTQ48N65X2M IXTQ44N50P
Manufacturer IXYS IXYS IXYS IXYS
Mounting Type Through Hole Through Hole Through Hole Through Hole
Rds On (Max) @ Id, Vgs 60mOhm @ 50A, 10V 40mOhm @ 30A, 10V 65mOhm @ 24A, 10V 140mOhm @ 22A, 10V
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Input Capacitance (Ciss) (Max) @ Vds 2720 pF @ 25 V 4530 pF @ 25 V 4300 pF @ 25 V 5440 pF @ 25 V
FET Type N-Channel N-Channel N-Channel N-Channel
Series Polar Trench - Polar
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 73 nC @ 10 V 76 nC @ 10 V 98 nC @ 10 V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 360W (Tc) 500W (Ta) 70W (Tc) 658W (Tc)
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Drain to Source Voltage (Vdss) 200 V 200 V 650 V 500 V
Package Tube Tube Tube Tube
Base Product Number IXTQ50 IXTQ60 - IXTQ44
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±30V ±30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 60A (Tc) 48A (Tc) 44A (Tc)
  • IXYS Related Products
  • IXTQ50N20P Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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