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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTQ52P10P
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IXTQ52P10PIXYS MOSFET P-CH 100V 52A TO3P
Part NumberIXTQ52P10P
PackageTO-3P-3, SC-65-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTQ52P10P
DescriptionMOSFET P-CH 100V 52A TO3P
In stock5703
Data sheet
1.IXTQ52P10P.pdf 2.IXTQ52P10P.pdf
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  • Specifications
  • Product Details - IXTQ52P10P
  • IXTQ52P10P Tech Specifications
    IXYS - IXTQ52P10P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTQ52P10P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P
    Series PolarP™
    Rds On (Max) @ Id, Vgs 50mOhm @ 52A, 10V
    Power Dissipation (Max) 300W (Tc)
    Package / Case TO-3P-3, SC-65-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2845 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 52A (Tc)
    Base Product Number IXTQ52
  • TheIXTQ52P10Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 100V 52A TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTQ52P10P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTQ52P10P IXTQ62N15P IXTQ54N30T IXTQ69N30P
Part Number IXTQ52P10P IXTQ62N15P IXTQ54N30T IXTQ69N30P
Manufacturer IXYS IXYS IXYS IXYS
Supplier Device Package TO-3P TO-3P TO-3P TO-3P
Power Dissipation (Max) 300W (Tc) 350W (Tc) - 500W (Tc)
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 62A (Tc) 54A (Tc) 69A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 52A, 10V 40mOhm @ 31A, 10V - 49mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Package Tube Tube Tube Tube
FET Type P-Channel N-Channel N-Channel N-Channel
Series PolarP™ Polar Trench Polar
Input Capacitance (Ciss) (Max) @ Vds 2845 pF @ 25 V 2250 pF @ 25 V - 4960 pF @ 25 V
Drain to Source Voltage (Vdss) 100 V 150 V 300 V 300 V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 70 nC @ 10 V - 180 nC @ 10 V
FET Feature - - - -
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id 4.5V @ 250µA 5.5V @ 250µA - 5V @ 250µA
Vgs (Max) ±20V ±20V - ±20V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 150°C (TJ)
Base Product Number IXTQ52 IXTQ62 IXTQ54 IXTQ69
Mounting Type Through Hole Through Hole Through Hole Through Hole
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  • IXTQ52P10P Download Datasheets (2)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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