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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTQ60N10T
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IXTQ60N10TIXYS MOSFET N-CH 100V 60A TO3P
Part NumberIXTQ60N10T
PackageTO-3P-3, SC-65-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTQ60N10T
DescriptionMOSFET N-CH 100V 60A TO3P
In stock7549
Data sheet
IXTQ60N10T.pdf
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  • Specifications
  • Product Details - IXTQ60N10T
  • IXTQ60N10T Tech Specifications
    IXYS - IXTQ60N10T technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTQ60N10T
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 50µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-3P
    Series Trench
    Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V
    Power Dissipation (Max) 176W (Tc)
    Package / Case TO-3P-3, SC-65-3
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 60A (Tc)
    Base Product Number IXTQ60
  • TheIXTQ60N10Tis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 100V 60A TO3P and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 50µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTQ60N10T or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTQ60N10T IXTQ50N25T IXTQ69N30PM IXTQ56N15T
Part Number IXTQ60N10T IXTQ50N25T IXTQ69N30PM IXTQ56N15T
Manufacturer IXYS IXYS IXYS IXYS
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V 4000 pF @ 25 V 4960 pF @ 25 V -
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3 Full Pack TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Base Product Number IXTQ60 IXTQ50 IXTQ69 IXTQ56
Supplier Device Package TO-3P TO-3P TO-3PFP TO-3P
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package Tube Tube Tube Tube
FET Type N-Channel N-Channel N-Channel N-Channel
Series Trench Trench Polar Trench
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 78 nC @ 10 V 156 nC @ 10 V -
Drain to Source Voltage (Vdss) 100 V 250 V 300 V 150 V
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V 60mOhm @ 25A, 10V 49mOhm @ 34.5A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 50µA 5V @ 1mA 5V @ 250µA -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 50A (Tc) 25A (Tc) 56A (Tc)
FET Feature - - - -
Vgs (Max) ±30V ±30V ±20V -
Power Dissipation (Max) 176W (Tc) 400W (Tc) 90W (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
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  • IXTQ60N10T Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
IXYS / Littelfuse
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