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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTR48P20P
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IXTR48P20PIXYS MOSFET P-CH 200V 30A ISOPLUS247
Part NumberIXTR48P20P
PackageTO-247-3
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTR48P20P
DescriptionMOSFET P-CH 200V 30A ISOPLUS247
In stock2642
Data sheet
IXTR48P20P.pdf
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  • Specifications
  • Product Details - IXTR48P20P
  • IXTR48P20P Tech Specifications
    IXYS - IXTR48P20P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTR48P20P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4.5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package ISOPLUS247™
    Series PolarP™
    Rds On (Max) @ Id, Vgs 93mOhm @ 24A, 10V
    Power Dissipation (Max) 190W (Tc)
    Package / Case TO-247-3
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole
    Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
    FET Type P-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 200 V
    Current - Continuous Drain (Id) @ 25°C 30A (Tc)
    Base Product Number IXTR48
  • TheIXTR48P20Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET P-CH 200V 30A ISOPLUS247 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4.5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTR48P20P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTR48P20P IXTT10P60 IXTT10N100D2 IXTT10N100D
Part Number IXTR48P20P IXTT10P60 IXTT10N100D2 IXTT10N100D
Manufacturer IXYS IXYS IXYS IXYS
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount
Supplier Device Package ISOPLUS247™ TO-268AA TO-268AA TO-268AA
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V 4700 pF @ 25 V 5320 pF @ 25 V 2500 pF @ 25 V
Base Product Number IXTR48 IXTT10 IXTT10 IXTT10
Series PolarP™ - Depletion Depletion
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V 160 nC @ 10 V 200 nC @ 5 V 130 nC @ 10 V
FET Feature - - Depletion Mode Depletion Mode
Rds On (Max) @ Id, Vgs 93mOhm @ 24A, 10V 1Ohm @ 5A, 10V 1.5Ohm @ 5A, 10V 1.4Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 10A (Tc) 10A (Tc) 10A (Tc)
Vgs (Max) ±20V ±20V ±20V ±30V
Drain to Source Voltage (Vdss) 200 V 600 V 1000 V 1000 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package Tube Tube Tube Tube
Vgs(th) (Max) @ Id 4.5V @ 250µA 5V @ 250µA - 3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Type P-Channel P-Channel N-Channel N-Channel
Power Dissipation (Max) 190W (Tc) 300W (Tc) 695W (Tc) 400W (Tc)
  • IXYS Related Products
  • IXTR48P20P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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