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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTT10N100D
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IXTT10N100DIXYS MOSFET N-CH 1000V 10A TO268
Part NumberIXTT10N100D
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTT10N100D
DescriptionMOSFET N-CH 1000V 10A TO268
In stock20765
Data sheet
IXTT10N100D.pdf
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  • Specifications
  • Product Details - IXTT10N100D
  • IXTT10N100D Tech Specifications
    IXYS - IXTT10N100D technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTT10N100D
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 3.5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series Depletion
    Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V
    Power Dissipation (Max) 400W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
    FET Type N-Channel
    FET Feature Depletion Mode
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 1000 V
    Current - Continuous Drain (Id) @ 25°C 10A (Tc)
    Base Product Number IXTT10
  • TheIXTT10N100Dis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 1000V 10A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 3.5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTT10N100D or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTT10N100D IXTT10N100D2 IXTT110N10L2 IXTT110N10P
Part Number IXTT10N100D IXTT10N100D2 IXTT110N10L2 IXTT110N10P
Manufacturer IXYS IXYS IXYS IXYS
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 200 nC @ 5 V 260 nC @ 10 V 110 nC @ 10 V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V 1.5Ohm @ 5A, 10V 18mOhm @ 55A, 10V 15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA - 4.5V @ 250µA 5V @ 250µA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Depletion Mode Depletion Mode - -
Drain to Source Voltage (Vdss) 1000 V 1000 V 100 V 100 V
Package Tube Tube Tube Tube
Vgs (Max) ±30V ±20V ±20V ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Base Product Number IXTT10 IXTT10 IXTT110 IXTT110
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA TO-268AA TO-268AA TO-268AA
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 5320 pF @ 25 V 10500 pF @ 25 V 3550 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc) 110A (Tc) 110A (Tc)
Series Depletion Depletion Linear L2™ Polar
Power Dissipation (Max) 400W (Tc) 695W (Tc) 600W (Tc) 480W (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
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  • IXTT10N100D Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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