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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTT36N50P
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IXTT36N50PIXYS MOSFET N-CH 500V 36A TO268
Part NumberIXTT36N50P
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTT36N50P
DescriptionMOSFET N-CH 500V 36A TO268
In stock3522
Data sheet
IXTT36N50P.pdf
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  • Specifications
  • Product Details - IXTT36N50P
  • IXTT36N50P Tech Specifications
    IXYS - IXTT36N50P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTT36N50P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±30V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series Polar
    Rds On (Max) @ Id, Vgs 170mOhm @ 500mA, 10V
    Power Dissipation (Max) 540W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 500 V
    Current - Continuous Drain (Id) @ 25°C 36A (Tc)
    Base Product Number IXTT36
  • TheIXTT36N50Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 500V 36A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±30V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTT36N50P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTT36N50P IXTT40N50L2-TRL IXTT30N60P IXTT36P10
Part Number IXTT36N50P IXTT40N50L2-TRL IXTT30N60P IXTT36P10
Manufacturer IXYS IXYS IXYS IXYS
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V -
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 320 nC @ 10 V 82 nC @ 10 V -
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 40A (Tc) 30A (Tc) 36A (Tc)
Drain to Source Voltage (Vdss) 500 V 500 V 600 V 100 V
Vgs(th) (Max) @ Id 5V @ 250µA 4.5V @ 250µA 5V @ 250µA -
FET Type N-Channel N-Channel N-Channel P-Channel
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max) 540W (Tc) 540W (Tc) 540W (Tc) -
Vgs (Max) ±30V ±20V ±30V -
Rds On (Max) @ Id, Vgs 170mOhm @ 500mA, 10V 170mOhm @ 20A, 10V 240mOhm @ 15A, 10V -
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V 10400 pF @ 25 V 5050 pF @ 25 V -
Series Polar Linear L2™ Polar -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Base Product Number IXTT36 IXTT40 IXTT30 IXTT36
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
FET Feature - - - -
Package Tube Tape & Reel (TR) Tube Tube
Supplier Device Package TO-268AA TO-268 TO-268AA TO-268AA
  • IXYS Related Products
  • IXTT36N50P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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