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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTT440N055T2
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IXTT440N055T2IXYS MOSFET N-CH 55V 440A TO268
Part NumberIXTT440N055T2
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTT440N055T2
DescriptionMOSFET N-CH 55V 440A TO268
In stock2576
Data sheet
IXTT440N055T2.pdf
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  • Specifications
  • Product Details - IXTT440N055T2
  • IXTT440N055T2 Tech Specifications
    IXYS - IXTT440N055T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTT440N055T2
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 4V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series TrenchT2™
    Rds On (Max) @ Id, Vgs 1.8mOhm @ 100A, 10V
    Power Dissipation (Max) 1000W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 25000 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 405 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 440A (Tc)
    Base Product Number IXTT440
  • TheIXTT440N055T2is a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 55V 440A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 4V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTT440N055T2 or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTT440N055T2 IXTT500N04T2 IXTT360N055T2 IXTT50P085
Part Number IXTT440N055T2 IXTT500N04T2 IXTT360N055T2 IXTT50P085
Manufacturer IXYS IXYS IXYS IXYS
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Type N-Channel N-Channel N-Channel P-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Gate Charge (Qg) (Max) @ Vgs 405 nC @ 10 V 405 nC @ 10 V 330 nC @ 10 V 150 nC @ 10 V
FET Feature - - - -
Package Tube Tube Tube Tube
Base Product Number IXTT440 IXTT500 IXTT360 -
Supplier Device Package TO-268AA TO-268AA TO-268AA TO-268AA
Drain to Source Voltage (Vdss) 55 V 40 V 55 V 85 V
Series TrenchT2™ TrenchT2™ TrenchT2™ -
Rds On (Max) @ Id, Vgs 1.8mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V 55mOhm @ 25A, 10V
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Current - Continuous Drain (Id) @ 25°C 440A (Tc) 500A (Tc) 360A (Tc) 50A (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Power Dissipation (Max) 1000W (Tc) 1000W (Tc) 935W (Tc) 300W (Tc)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4V @ 250µA 3.5V @ 250µA 4V @ 250µA 5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 25000 pF @ 25 V 25000 pF @ 25 V 20000 pF @ 25 V 4200 pF @ 25 V
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  • IXTT440N055T2 Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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