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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIXTT69N30P
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IXTT69N30PIXYS MOSFET N-CH 300V 69A TO268
Part NumberIXTT69N30P
PackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ManufacturerIXYS / Littelfuse
RoHs Status
Manufacturer Part NumberIXYS-IXTT69N30P
DescriptionMOSFET N-CH 300V 69A TO268
In stock2106
Data sheet
IXTT69N30P.pdf
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  • Specifications
  • Product Details - IXTT69N30P
  • IXTT69N30P Tech Specifications
    IXYS - IXTT69N30P technical specifications, attributes, parameters and parts with similar specifications to IXYS - IXTT69N30P
    Manufacturer IXYS / Littelfuse
    Vgs(th) (Max) @ Id 5V @ 250µA
    Vgs (Max) ±20V
    Technology MOSFET (Metal Oxide)
    Supplier Device Package TO-268AA
    Series Polar
    Rds On (Max) @ Id, Vgs 49mOhm @ 500mA, 10V
    Power Dissipation (Max) 500W (Tc)
    Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Package Tube
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V
    Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
    FET Type N-Channel
    FET Feature -
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Drain to Source Voltage (Vdss) 300 V
    Current - Continuous Drain (Id) @ 25°C 69A (Tc)
    Base Product Number IXTT69
  • TheIXTT69N30Pis a Discrete Semiconductor Products component, full developed and mass-produced by IXYS manufacturer, subject to rigorous quality control and successfully meeting production standards. The product description is MOSFET N-CH 300V 69A TO268 and it falls under the category of Transistors - FETs, MOSFETs - Single, with Manufacturer of IXYS / Littelfuse and Vgs(th) (Max) @ Id of 5V @ 250µA and Vgs (Max) of ±20V. Efficient purchasing through Ixys-Electronics.com. Here, you can find a wide variety of electronic components produced by manufacturers worldwide. If you do not find the information you are looking for, you can obtain more valuable information via email [email protected], such as stock quantities, special pricing, datasheets, and more details for IXTT69N30P or order. We are always pleased to hear from you, so feel free to contact us at any time.

Product Comparison

Product Attribute IXTT69N30P IXTT6N120 IXTT75N20L2 IXTT75N10L2
Part Number IXTT69N30P IXTT6N120 IXTT75N20L2 IXTT75N10L2
Manufacturer IXYS IXYS IXYS IXYS
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA - 4.5V @ 250µA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V 1950 pF @ 25 V - 8100 pF @ 25 V
Series Polar - Linear L2™ Linear L2™
Package Tube Box Tube Tube
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Power Dissipation (Max) 500W (Tc) 300W (Tc) - 400W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V
Vgs (Max) ±20V ±20V - ±20V
Mounting Type Surface Mount Surface Mount - Surface Mount
FET Type N-Channel N-Channel - N-Channel
Supplier Device Package TO-268AA TO-268AA - TO-268AA
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 6A (Tc) - 75A (Tc)
FET Feature - - - -
Rds On (Max) @ Id, Vgs 49mOhm @ 500mA, 10V 2.6Ohm @ 3A, 10V - 21mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 56 nC @ 10 V - 215 nC @ 10 V
Base Product Number IXTT69 IXTT6 IXTT75 IXTT75
Drain to Source Voltage (Vdss) 300 V 1200 V - 100 V
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA - TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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  • IXTT69N30P Download Datasheets (1)

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IXYS IXYS IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.
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